Publication:

Combined IV and CV analysis of laser annealed carbon and boron implanted SiGe epitaxial layers

Date

2010
Proceedings Paper
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dc.contributor.authorKobayashi, Daisuke
dc.contributor.authorBargallo Gonzalez, Mireia
dc.contributor.authorRosseel, Erik
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorHirose, K.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-18T17:43:57Z
dc.date.available2021-10-18T17:43:57Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/17388
dc.source.beginpage191
dc.source.conferenceHigh Purity Silicon 11
dc.source.conferencedate10/10/2010
dc.source.conferencelocationLas Vegas, NV USA
dc.source.endpage202
dc.title

Combined IV and CV analysis of laser annealed carbon and boron implanted SiGe epitaxial layers

dc.typeProceedings paper
dspace.entity.typePublication
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