Publication:
Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers
Date
| dc.contributor.author | Shimura, Yosuke | |
| dc.contributor.author | Srinivasan, Ashwyn | |
| dc.contributor.author | Loo, Roger | |
| dc.contributor.imecauthor | Srinivasan, Ashwyn | |
| dc.contributor.imecauthor | Loo, Roger | |
| dc.contributor.orcidimec | Loo, Roger::0000-0003-3513-6058 | |
| dc.date.accessioned | 2021-10-23T14:51:26Z | |
| dc.date.available | 2021-10-23T14:51:26Z | |
| dc.date.issued | 2016-03 | |
| dc.identifier.issn | 2162-8769 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/27303 | |
| dc.identifier.url | 10.1149/2.0301605jss | |
| dc.source.beginpage | Q140 | |
| dc.source.endpage | Q143 | |
| dc.source.issue | 5 | |
| dc.source.journal | ECS Journal of Solid State Science and Technology | |
| dc.source.volume | 5 | |
| dc.title | Design requirements for group-IV laser based on fully strained Ge1-xSnx embedded in partially relaxed Si1-y-zGeySnz buffer layers | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
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