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The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

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dc.contributor.authorVan der Stricht, Wim
dc.contributor.authorMoerman, Ingrid
dc.contributor.authorDemeester, Piet
dc.contributor.authorCrawley, J. A.
dc.contributor.authorThrush, E. J.
dc.contributor.authorMiddleton, P. G.
dc.contributor.authorTrager Cowan, C.
dc.contributor.authorO'Donnell, K. P.
dc.contributor.imecauthorMoerman, Ingrid
dc.contributor.imecauthorDemeester, Piet
dc.date.accessioned2021-09-29T15:38:30Z
dc.date.available2021-09-29T15:38:30Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1573
dc.source.beginpage231
dc.source.conferenceGallium Nitride and Related Materials; 27 November - 1 December 1995; Boston, MA, USA.
dc.source.conferencelocation
dc.source.endpage236
dc.title

The effect of a GaN nucleation layer on GaN film properties grown by metalorganic chemical vapor deposition

dc.typeProceedings paper
dspace.entity.typePublication
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