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Exploring high aspEct ratio 2μm TSV (25:1)

Date

2011-11
Proceedings Paper
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dc.contributor.authorKostermans, Maarten
dc.contributor.authorBrouri, Mohand
dc.contributor.authorBaier, Ulrich
dc.contributor.authorVertommen, Johan
dc.contributor.authorPageau, Arnaud
dc.contributor.authorBoullart, Werner
dc.contributor.imecauthorVertommen, Johan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-19T14:56:46Z
dc.date.available2021-10-19T14:56:46Z
dc.date.issued2011-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19196
dc.identifier.urlhttp://meetings.aps.org/Meeting/GEC11/Event/151471
dc.source.conference64th Annual Gaseous Electronics Conference - GEC
dc.source.conferencedate14/11/2011
dc.source.conferencelocationSalt Lake City, UT USA
dc.title

Exploring high aspEct ratio 2μm TSV (25:1)

dc.typeProceedings paper
dspace.entity.typePublication
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