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Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments

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dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGoux, Ludovic
dc.contributor.authorWouters, Dirk
dc.contributor.authorKittl, Jorge
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.date.accessioned2021-10-18T15:57:31Z
dc.date.available2021-10-18T15:57:31Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16997
dc.source.beginpage623
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate6/12/2010
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage625
dc.title

Generic learning of TDDB applied to RRAM for improved understanding of conduction and switching mechanism through multiple filaments

dc.typeProceedings paper
dspace.entity.typePublication
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