Publication:

Area-Selective Deposition of AlOx and Al-Silicate for Fully Self- Aligned Via Integration

Date

2023
Journal article
https://doi.org/10.1021/acsami.2c18014
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dc.contributor.authorPasquali, Mattia
dc.contributor.authorBrady-Boyd, Anita
dc.contributor.authorLesniewska, Alicja
dc.contributor.authorCarolan, Patrick
dc.contributor.authorConard, Thierry
dc.contributor.authorO'Connor, Robert
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorArmini, Silvia
dc.contributor.imecauthorPasquali, Mattia
dc.contributor.imecauthorBrady-Boyd, Anita
dc.contributor.imecauthorLesniewska, Alicja
dc.contributor.imecauthorCarolan, Patrick
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorArmini, Silvia
dc.contributor.orcidimecPasquali, Mattia::0000-0002-1309-1082
dc.contributor.orcidimecBrady-Boyd, Anita::0000-0002-9257-6837
dc.contributor.orcidimecLesniewska, Alicja::0000-0003-3863-065X
dc.contributor.orcidimecCarolan, Patrick::0000-0001-5931-3093
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecArmini, Silvia::0000-0003-0578-3422
dc.date.accessioned2023-07-24T14:41:43Z
dc.date.available2023-02-19T03:24:15Z
dc.date.available2023-07-24T14:41:43Z
dc.date.embargo9999-12-31
dc.date.issued2023
dc.description.wosFundingTextThe authors acknowledge IMEC's Industrial Affiliation Program on Nano-Interconnects, Imec's p-line for support in the manufacturing of the patterned test wafers. This project has received funding from the European Union's Horizon 2020 Research and Innovation Program under the Marie Sklodow-ska-Curie grant agreement No. 888163. The authors would like to thank Philippe Marien for his support with the manufacturing of planar capacitor wafers, Jan-Willem Clerix for coding the script used to compute the PSDs, and Hans Billington and Inge Manders for their help with the SEM measurements. Gelest and Pegasus are kindly acknowledged for providing the ALD precursors free of charge.
dc.identifier.doi10.1021/acsami.2c18014
dc.identifier.issn1944-8244
dc.identifier.pmidMEDLINE:36649199
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/41113
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage6079
dc.source.endpage6091
dc.source.issue4
dc.source.journalACS APPLIED MATERIALS & INTERFACES
dc.source.numberofpages13
dc.source.volume15
dc.subject.keywordsATOMIC LAYER DEPOSITION
dc.subject.keywordsRAY PHOTOELECTRON-SPECTROSCOPY
dc.subject.keywordsAL2O3 THIN-FILMS
dc.subject.keywordsDIMETHYLALUMINUM ISOPROPOXIDE
dc.subject.keywordsREACTION-MECHANISM
dc.subject.keywordsALUMINUM
dc.subject.keywordsGROWTH
dc.subject.keywordsSIO2
dc.subject.keywordsNUCLEATION
dc.subject.keywordsCHEMISTRY
dc.title

Area-Selective Deposition of AlOx and Al-Silicate for Fully Self- Aligned Via Integration

dc.typeJournal article
dspace.entity.typePublication
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