Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs

dc.contributor.author	Vandooren, Anne
dc.contributor.author	Leonelli, Daniele
dc.contributor.author	Rooyackers, Rita
dc.contributor.author	Arstila, Kai
dc.contributor.author	Groeseneken, Guido
dc.contributor.author	Huyghebaert, Cedric
dc.contributor.imecauthor	Vandooren, Anne
dc.contributor.imecauthor	Leonelli, Daniele
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.imecauthor	Huyghebaert, Cedric
dc.contributor.orcidimec	Vandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimec	Huyghebaert, Cedric::0000-0001-6043-7130
dc.date.accessioned	2021-10-20T18:04:16Z
dc.date.available	2021-10-20T18:04:16Z
dc.date.issued	2012
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/21746
dc.source.beginpage	82
dc.source.endpage	87
dc.source.journal	Solid-State Electronics
dc.source.volume	72
dc.title	Impact of process and geometrical parameters on the electrical characteristics of vertical nanowire silicon n-TFETs
dc.type	Journal article
dspace.entity.type	Publication
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