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Reduction of the anomalous VT behavior in MOSFETs with High-k/metal gate stacks
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Reduction of the anomalous VT behavior in MOSFETs with High-k/metal gate stacks
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Date
2007
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ferain, Isabelle
;
Pantisano, Luigi
;
Kottantharayil, Anil
;
Petry, Jasmine
;
Trojman, Lionel
;
Collaert, Nadine
;
Jurczak, Gosia
;
De Meyer, Kristin
Journal
Microelectronic Engineering
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1825
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Acq. date: 2025-12-15
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Views
1825
since deposited on 2021-10-16
3
last month
1
last week
Acq. date: 2025-12-15
Citations