Publication:

0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

Date

2020
Proceedings Paper
https://doi.org/10.1109/ECOC48923.2020.9333310
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dc.contributor.authorOzdemir, Cenk Ibrahim
dc.contributor.authorde Koninck, Yannick
dc.contributor.authorYudistira, Didit
dc.contributor.authorKuznetsova, Nadezda
dc.contributor.authorBaryshnikova, Marina
dc.contributor.authorvan Thourhout, Dries
dc.contributor.authorKunert, Bernardette
dc.contributor.authorPantouvaki, Marianna
dc.contributor.authorvan Campenhout, Joris
dc.contributor.imecauthorOzdemir, Cenk Ibrahim
dc.contributor.imecauthorde Koninck, Yannick
dc.contributor.imecauthorYudistira, Didit
dc.contributor.imecauthorKuznetsova, Nadezda
dc.contributor.imecauthorBaryshnikova, Marina
dc.contributor.imecauthorvan Thourhout, Dries
dc.contributor.imecauthorKunert, Bernardette
dc.contributor.imecauthorPantouvaki, Marianna
dc.contributor.imecauthorvan Campenhout, Joris
dc.contributor.orcidimecOzdemir, Cenk Ibrahim::0000-0002-6445-5763
dc.contributor.orcidimecBaryshnikova, Marina::0000-0002-5945-4459
dc.contributor.orcidimecVan Thourhout, Dries::0000-0003-0111-431X
dc.contributor.orcidimecKunert, Bernardette::0000-0002-8986-4109
dc.contributor.orcidimecVan Campenhout, Joris::0000-0003-0778-2669
dc.date.accessioned2023-02-02T14:24:47Z
dc.date.available2021-11-02T16:00:21Z
dc.date.available2023-02-02T14:23:06Z
dc.date.available2023-02-02T14:24:47Z
dc.date.embargo2023-05-07
dc.date.issued2020
dc.identifier.doi10.1109/ECOC48923.2020.9333310
dc.identifier.eisbn978-1-7281-7361-0
dc.identifier.issnna
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37821
dc.publisherIEEE
dc.source.conferenceEuropean Conference on Optical Communications (ECOC)
dc.source.conferencedateDEC 06-10, 2020
dc.source.conferencelocationBrussels
dc.source.journalna
dc.source.numberofpages4
dc.title

0.3pA Dark Current and 0.65A/W Responsivity 1020nm InGaAs/GaAs Nano-Ridge Waveguide Photodetector Monolithically Integrated on a 300-mm Si Wafer

dc.typeProceedings paper
dspace.entity.typePublication
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