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Influence of Ge3N4 interlayers on the Schottky barrier heigh of metal contacts on n-type germanium

Date

2009
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dc.contributor.authorLieten, Ruben
dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorHoang, Thoan Nguyen
dc.contributor.authorDegroote, Stefan
dc.contributor.authorBorghs, Gustaaf
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-10-18T00:02:21Z
dc.date.available2021-10-18T00:02:21Z
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15716
dc.source.conferenceInternational Symposium on Compound Semiconductors
dc.source.conferencedate30/08/2009
dc.source.conferencelocationSanta Barbara, CA USA
dc.title

Influence of Ge3N4 interlayers on the Schottky barrier heigh of metal contacts on n-type germanium

dc.typeOral presentation
dspace.entity.typePublication
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