Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization

dc.contributor.author	Verhulst, Anne
dc.contributor.author	Vandenberghe, William
dc.contributor.author	Maex, Karen
dc.contributor.author	Groeseneken, Guido
dc.contributor.imecauthor	Verhulst, Anne
dc.contributor.imecauthor	Maex, Karen
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.orcidimec	Verhulst, Anne::0000-0002-3742-9017
dc.date.accessioned	2021-10-17T12:31:58Z
dc.date.available	2021-10-17T12:31:58Z
dc.date.issued	2008
dc.identifier.issn	0021-8979
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/14749
dc.identifier.url	http://link.aip.org/link/?JAP/104/064514
dc.source.beginpage	64514
dc.source.issue	6
dc.source.journal	Journal of Applied Physics
dc.source.volume	104
dc.title	Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization
dc.type	Journal article
dspace.entity.type	Publication
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