The Perovskite-rooted solar cell is a promising candidate to lead the future solar cell industry. Efficiency of perovskite solar cell strongly relies on the thickness and each material’s properties. The present research aims at a systematic study of both material and bandgap optimization for each layer to obtain higher efficiency of the device. The comparative analysis of perovskite material with different halide ions exhibits that CH3NH3PbX3 [where X: I] offers the highest efficiency due to an appropriate bandgap. CH3NH3PbI3 based device is proved as the most promising candidate. The current study also demonstrates device-level integration and co-optimization of MASnBr3 and Cd0.5Zn0.5S combination as HTL and ETL layers respectively, along with dual role of ZnO as transparent electrode and encapsulation layer. (300 nm)ZnO/(50 nm)Cd0.5Zn0.5S/IDL/(850 nm)CH3NH3PbI3/IDL/(350 nm)MASnBr3 architecture exhibits best performance, achieving power conversion efficiency (PCE) of 27.12%, a short-circuit current density (JSC) of 25.34 mA/cm2, an open-circuit voltage (VOC) of 1.196 V and the fill factor of 89.50%.
