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Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

Date

2018
Proceedings Paper
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dc.contributor.authorAlian, AliReza
dc.contributor.authorEl Kazzi, Salim
dc.contributor.authorVerhulst, Anne
dc.contributor.authorMilenin, Alexey
dc.contributor.authorPinna, Nicolo
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorLin, Dennis
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorAlian, AliReza
dc.contributor.imecauthorVerhulst, Anne
dc.contributor.imecauthorMilenin, Alexey
dc.contributor.imecauthorPinna, Nicolo
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecVerhulst, Anne::0000-0002-3742-9017
dc.contributor.orcidimecMilenin, Alexey::0000-0003-0747-0462
dc.contributor.orcidimecPinna, Nicolo::0000-0003-3392-0324
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-25T16:32:14Z
dc.date.available2021-10-25T16:32:14Z
dc.date.embargo9999-12-31
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30108
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8510619
dc.source.beginpage133
dc.source.conferenceIEEE Symposium on VLSI Technology
dc.source.conferencedate18/06/2018
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage134
dc.title

Record 47 mV/dec top-down vertical nanowire InGaAs/GaAsSb tunnel FETs

dc.typeProceedings paper
dspace.entity.typePublication
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