Publication:

Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures

 
dc.contributor.authorShlyakhov, I
dc.contributor.authorAchra, Swati
dc.contributor.authorBosman, N.
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorHuyghebaert, Cedric
dc.contributor.authorRadu, Iuliana
dc.contributor.authorChai, J.
dc.contributor.authorYang, M.
dc.contributor.authorWang, S. J.
dc.contributor.authorBol, A.
dc.contributor.authorIakoubovskii, K.
dc.contributor.authorHoussa, Michel
dc.contributor.authorStesmans, A.
dc.contributor.authorAfanas'ev, V. V.
dc.contributor.imecauthorAchra, Swati
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorHuyghebaert, Cedric
dc.contributor.imecauthorRadu, Iuliana
dc.contributor.imecauthorHoussa, Michel
dc.contributor.orcidextShlyakhov, I::0000-0003-0845-910X
dc.contributor.orcidextWang, S. J.::0000-0001-6312-3524
dc.contributor.orcidextBol, A.::0000-0002-1259-6265
dc.contributor.orcidimecAchra, Swati::0000-0002-4837-6109
dc.contributor.orcidimecHuyghebaert, Cedric::0000-0001-6043-7130
dc.contributor.orcidimecRadu, Iuliana::0000-0002-7230-7218
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.date.accessioned2022-06-20T10:18:36Z
dc.date.available2021-11-02T16:02:24Z
dc.date.available2022-05-30T08:32:37Z
dc.date.available2022-06-20T10:18:36Z
dc.date.issued2021
dc.identifier.doi10.1088/1361-6463/abfb1b
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37986
dc.publisherIOP PUBLISHING LTD
dc.source.beginpage295101
dc.source.issue29
dc.source.journalJOURNAL OF PHYSICS D-APPLIED PHYSICS
dc.source.numberofpages8
dc.source.volume54
dc.subject.keywordsPRECISE DETERMINATION
dc.subject.keywordsBAND ALIGNMENT
dc.subject.keywordsSINGLE-LAYER
dc.subject.keywordsMONOLAYER
dc.subject.keywordsMOS2
dc.title

Internal photoemission of electrons from 2D semiconductor/3D metal barrier structures

dc.typeJournal article
dspace.entity.typePublication
Files
Publication available in collections: