Analysis of a narrow-base laterel IGBT with double buried layer for junction-isolated smart-power technologies

dc.contributor.author	Bakeroot, Benoit
dc.contributor.author	Doutreloigne, Jan
dc.contributor.author	Vanmeerbeek, P.
dc.contributor.author	Moens, P.
dc.contributor.imecauthor	Bakeroot, Benoit
dc.contributor.imecauthor	Doutreloigne, Jan
dc.contributor.orcidimec	Bakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned	2021-10-17T06:14:41Z
dc.date.available	2021-10-17T06:14:41Z
dc.date.embargo	9999-12-31
dc.date.issued	2008
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/13331
dc.source.beginpage	435
dc.source.endpage	445
dc.source.issue	1
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	55
dc.title	Analysis of a narrow-base laterel IGBT with double buried layer for junction-isolated smart-power technologies
dc.type	Journal article
dspace.entity.type	Publication
Files	Original bundle Name: 17336.pdf Size: 1.4 MB Format: Adobe Portable Document Format Download
Publication available in collections:	Articles

Date