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Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
Publication:
Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination
Date
2016
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Hu, Jie
;
Stoffels, Steve
;
Lenci, Silvia
;
De Jaeger, Brice
;
Ronchi, Nicolo
;
Tallarico, Andrea
;
Wellekens, Dirk
;
You, Shuzhen
;
Bakeroot, Benoit
;
Groeseneken, Guido
;
Decoutere, Stefaan
Journal
IEEE Transactions on Electron Devices
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1891
since deposited on 2021-10-23
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Acq. date: 2025-10-24
Citations
Metrics
Views
1891
since deposited on 2021-10-23
426
item.page.metrics.field.last-week
Acq. date: 2025-10-24
Citations