Publication:
High-Q RF inductors on 20 Ohm.cm silicon realized through wafer-level packaging techniques
Date
| dc.contributor.author | Carchon, Geert | |
| dc.contributor.author | De Raedt, Walter | |
| dc.contributor.author | Beyne, Eric | |
| dc.contributor.imecauthor | De Raedt, Walter | |
| dc.contributor.imecauthor | Beyne, Eric | |
| dc.contributor.orcidimec | De Raedt, Walter::0000-0002-7117-7976 | |
| dc.contributor.orcidimec | Beyne, Eric::0000-0002-3096-050X | |
| dc.date.accessioned | 2021-10-15T04:05:53Z | |
| dc.date.available | 2021-10-15T04:05:53Z | |
| dc.date.issued | 2003 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/7280 | |
| dc.source.beginpage | 26 | |
| dc.source.endpage | 30 | |
| dc.source.issue | 1 | |
| dc.source.journal | Microelectronics International | |
| dc.source.volume | 20 | |
| dc.title | High-Q RF inductors on 20 Ohm.cm silicon realized through wafer-level packaging techniques | |
| dc.type | Journal article | |
| dspace.entity.type | Publication | |
| Files | ||
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