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Investigation of the threshold voltage difference between partially-depleted SOI and bulk CMOS transistors

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dc.contributor.authorvan Meer, Hans
dc.contributor.authorLyu, Jeong-ho
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-10-14T11:48:17Z
dc.date.available2021-10-14T11:48:17Z
dc.date.issued1999
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/3937
dc.source.beginpage372
dc.source.conferenceESSDERC'99 - Proceedings of the 29th European Solid-State Device Research Conference; 13-15 September 1999; Leuven, Belgium.
dc.source.conferencelocation
dc.source.endpage375
dc.title

Investigation of the threshold voltage difference between partially-depleted SOI and bulk CMOS transistors

dc.typeProceedings paper
dspace.entity.typePublication
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