Publication:

Low optical loss ohmic contacts on heavily doped n-type InGaAs for InP membrabes devices

Date

2015
Proceedings Paper
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dc.contributor.authorShen, Longfei
dc.contributor.authorvan Veldhoven, rene
dc.contributor.authorJiao, Yuqing
dc.contributor.authorDolores-Calzadilla, Victor
dc.contributor.authorVan der Tol, Jos
dc.contributor.authorRoelkens, Gunther
dc.contributor.authorSmit, Meint
dc.contributor.imecauthorRoelkens, Gunther
dc.contributor.orcidimecRoelkens, Gunther::0000-0002-4667-5092
dc.date.accessioned2021-10-22T22:47:45Z
dc.date.available2021-10-22T22:47:45Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25895
dc.source.conference27th International Conference on Indium Phosphide and related Materials - IPRM
dc.source.conferencedate28/06/2016
dc.source.conferencelocationSanta Barbara, CA USA
dc.title

Low optical loss ohmic contacts on heavily doped n-type InGaAs for InP membrabes devices

dc.typeProceedings paper
dspace.entity.typePublication
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