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Evanescent Coupling Degradation from Particle-Induced Voids in III-V/Si Micro-transfer-printed Integrated Lasers

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cris.virtual.orcid0000-0001-6608-9990
cris.virtual.orcid0000-0001-5655-3470
cris.virtual.orcid0000-0002-4667-5092
cris.virtual.orcid0000-0001-9624-3928
cris.virtualsource.department7897aa7a-0c43-4929-b5ef-9f5606dd37c6
cris.virtualsource.department269e99b3-e865-45a6-be00-65dcb446d66d
cris.virtualsource.departmentb32be2a6-49e5-4859-8aac-84fd4f5bec8e
cris.virtualsource.department1661a067-e09d-41e0-8dfc-834fda2c7169
cris.virtualsource.orcid7897aa7a-0c43-4929-b5ef-9f5606dd37c6
cris.virtualsource.orcid269e99b3-e865-45a6-be00-65dcb446d66d
cris.virtualsource.orcidb32be2a6-49e5-4859-8aac-84fd4f5bec8e
cris.virtualsource.orcid1661a067-e09d-41e0-8dfc-834fda2c7169
dc.contributor.authorLiu, Yang
dc.contributor.authorZhang, Jing
dc.contributor.authorDelli, Evangelia
dc.contributor.authorRoelkens, Gunther
dc.date.accessioned2026-09-07T09:36:02Z
dc.date.available2026-09-07T09:36:02Z
dc.date.createdwos2026
dc.date.issued2026
dc.description.abstractVoid-induced evanescent coupling degradation in InP-on-Si lasers is analyzed. A location-dependent analysis reveals 100nm particles at the tapers cause a 0.913 dB loss (vs. 0.058 dB at mid-coupon). Guidelines for void-tolerant evanescent interfaces on the SiPh platform are proposed.
dc.description.wosFundingTextThis work was supported by the PhotonixFAB project (101111896) and the Dutch Growth Fund PhotonDelta project.
dc.identifier.doi10.1117/12.3078863
dc.identifier.isbn978-1-5106-9697-6
dc.identifier.issn0277-786X
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/60221
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherSPIE-INT SOC OPTICAL ENGINEERING
dc.source.beginpage1389006
dc.source.conferencePhysics and Simulation of Optoelectronic Devices XXXIV
dc.source.conferencedate2026-01-16
dc.source.conferencelocationSan Francisco
dc.source.journalPHYSICS AND SIMULATION OF OPTOELECTRONIC DEVICES XXXIV
dc.source.numberofpages4
dc.title

Evanescent Coupling Degradation from Particle-Induced Voids in III-V/Si Micro-transfer-printed Integrated Lasers

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-07-14
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-07-14
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