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Reduced self-heating by strained silicon substrate engineering

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dc.contributor.authorO'Neill, A.
dc.contributor.authorOlsen, S.
dc.contributor.authorYang, Y.
dc.contributor.authorAgaiby, R.
dc.contributor.authorHellstrom, P.E
dc.contributor.authorOstling, M.
dc.contributor.authorLyutovich, K.
dc.contributor.authorKasper, E.
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.contributor.authorFiegna, C.
dc.contributor.authorSangiorgi, E.
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T18:18:43Z
dc.date.available2021-10-16T18:18:43Z
dc.date.embargo9999-12-31
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12644
dc.source.conference3rd International Workshop on New Group IV Semiconductor Nanoelectronics
dc.source.conferencedate8/11/2007
dc.source.conferencelocationSendai Japan
dc.title

Reduced self-heating by strained silicon substrate engineering

dc.typeMeeting abstract
dspace.entity.typePublication
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