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Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

Date

2010
Journal article
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dc.contributor.authorXie, Qi
dc.contributor.authorDeduytsche, Davy
dc.contributor.authorSchaekers, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorDelabie, Annelies
dc.contributor.authorQu, Xin-Ping
dc.contributor.authorDetavernier, Christophe
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.date.accessioned2021-10-19T00:39:48Z
dc.date.available2021-10-19T00:39:48Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18377
dc.source.beginpage112905
dc.source.issue11
dc.source.journalApplied Physics Letters
dc.source.volume97
dc.title

Implementing TiO2 as gate dielectric for Ge-channel complementary metal-oxide-semiconductor devices by using HfO2/GeO2 interlayer

dc.typeJournal article
dspace.entity.typePublication
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