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Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong plasmon-phonon coupling regime

Date

2012
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dc.contributor.authorShkerdin, Gennady
dc.contributor.authorRabbaa, Sulaiman
dc.contributor.authorStiens, Johan
dc.contributor.authorVounckx, Roger
dc.contributor.imecauthorStiens, Johan
dc.contributor.imecauthorVounckx, Roger
dc.date.accessioned2021-10-20T16:05:52Z
dc.date.available2021-10-20T16:05:52Z
dc.date.embargo9999-12-31
dc.date.issued2012
dc.identifier.issn0022-3727
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21505
dc.source.beginpage495103
dc.source.issue49
dc.source.journalJournal of Physics D: Applied Physics
dc.source.volume45
dc.title

Free electron absorption in n-doped GaN semiconductors at mid-IR wavelengths in the strong plasmon-phonon coupling regime

dc.typeJournal article
dspace.entity.typePublication
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