Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices – application to NBTI

dc.contributor.author	Kaczer, Ben
dc.contributor.author	Roussel, Philippe
dc.contributor.author	Grasser, Tibor
dc.contributor.author	Groeseneken, Guido
dc.contributor.imecauthor	Kaczer, Ben
dc.contributor.imecauthor	Roussel, Philippe
dc.contributor.imecauthor	Groeseneken, Guido
dc.contributor.orcidimec	Kaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimec	Roussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimec	Groeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned	2021-10-18T17:28:02Z
dc.date.available	2021-10-18T17:28:02Z
dc.date.embargo	9999-12-31
dc.date.issued	2010
dc.identifier.issn	0741-3106
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/17337
dc.identifier.url	http://ieeexplore.ieee.org/xpl/freeabs_all.jsp?arnumber=5443509
dc.source.beginpage	411
dc.source.endpage	413
dc.source.issue	5
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	31
dc.title	Statistics of multiple trapped charges in the gate oxide of deeply scaled MOSFET devices – application to NBTI
dc.type	Journal article
dspace.entity.type	Publication
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