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Extrinsic interface formation of HfO2 and Al2O3 /GeOx gate stacks on Ge (100) substrates
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Extrinsic interface formation of HfO2 and Al2O3 /GeOx gate stacks on Ge (100) substrates
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Date
2009
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Seo, F.
;
Bellenger, Florence
;
Chung, K.B.
;
Houssa, Michel
;
Meuris, Marc
;
Heyns, Marc
;
Lukovsky, G.
Journal
Journal of Applied Physics
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1990
since deposited on 2021-10-18
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Acq. date: 2025-12-10
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Views
1990
since deposited on 2021-10-18
1
last month
Acq. date: 2025-12-10
Citations