Publication:
In situ-grown ultra-thin Si3N4 passivation and gate dielectric layers for AlGaN/GaN insulating gate HFET
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1921 since deposited on 2021-10-16
1last month
Acq. date: 2025-12-15
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Metrics
Views
1921 since deposited on 2021-10-16
1last month
Acq. date: 2025-12-15
Citations