Publication:
In situ-grown ultra-thin Si3N4 passivation and gate dielectric layers for AlGaN/GaN insulating gate HFET
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1923 since deposited on 2021-10-16
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Acq. date: 2026-08-08
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Statistics
Views
1923 since deposited on 2021-10-16
1last month
1last week
Acq. date: 2026-08-08
Citations