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Study of the etching mechanism of heavily doped Si in HF

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dc.contributor.authorValckx, Nick
dc.contributor.authorCuypers, Daniel
dc.contributor.authorVos, Rita
dc.contributor.authorPhilipsen, Harold
dc.contributor.authorRip, Jens
dc.contributor.authorDoumen, Geert
dc.contributor.authorMertens, Paul
dc.contributor.authorHeyns, Marc
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorVos, Rita
dc.contributor.imecauthorPhilipsen, Harold
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorDoumen, Geert
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecPhilipsen, Harold::0000-0002-5029-1104
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-18T22:42:08Z
dc.date.available2021-10-18T22:42:08Z
dc.date.embargo9999-12-31
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18133
dc.source.beginpage158
dc.source.conference10th International Symposium on Ultra-Clean Processing of Semiconductor Devices - UCPSS
dc.source.conferencedate20/09/2010
dc.source.conferencelocationOostende Belgium
dc.source.endpage159
dc.title

Study of the etching mechanism of heavily doped Si in HF

dc.typeMeeting abstract
dspace.entity.typePublication
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