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Investigation of crystal defects in As-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering

Date

1995
Proceedings Paper
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dc.contributor.authorKissinger, G.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorGräf, D.
dc.contributor.authorZulehner, W.
dc.contributor.authorClaeys, Cor
dc.contributor.authorRichter, H.
dc.date.accessioned2021-09-29T13:08:19Z
dc.date.available2021-09-29T13:08:19Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/702
dc.source.beginpage156
dc.source.conferenceALTECH 95: Analytical Techniques for Semiconductor Materials and Process Characterization II. Proceedings of the Satellite Sympo
dc.source.conferencedate28/09/1995
dc.source.conferencelocationDen Haag The Netherlands
dc.source.endpage165
dc.title

Investigation of crystal defects in As-grown and processed silicon wafers and heteroepitaxial layers by infrared light scattering

dc.typeProceedings paper
dspace.entity.typePublication
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