Publication:

Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

Date

2018
Proceedings Paper
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dc.contributor.authorYou, Shuzhen
dc.contributor.authorPosthuma, Niels
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorStoffels, Steve
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorWellekens, Dirk
dc.contributor.authorLiang, Hu
dc.contributor.authorZhao, Ming
dc.contributor.authorDecoutere, Stefaan
dc.contributor.imecauthorYou, Shuzhen
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorStoffels, Steve
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.imecauthorWellekens, Dirk
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned2021-10-26T10:19:03Z
dc.date.available2021-10-26T10:19:03Z
dc.date.issued2018
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/32340
dc.identifier.urlhttp://www.imt.ro/WOCSDICE2018/Program%20WOCSDICE2018_07.05.2018.pdf
dc.source.beginpage28
dc.source.conferenceWorkshop on Compound Semiconductor Devices and Integrated Circuits held in Europe
dc.source.conferencedate14/05/2018
dc.source.conferencelocationBucharest Romania
dc.source.endpage29
dc.title

Dielectrics choice and processing for low dispersion enhancement mode p-GaN gate HEMTs on 200mm Si substrates

dc.typeProceedings paper
dspace.entity.typePublication
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