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Ge content and recess depth dependence of the band-to-band tunneling current in Si 1-xGe x/Si hetero-junctions
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Ge content and recess depth dependence of the band-to-band tunneling current in Si 1-xGe x/Si hetero-junctions
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Rodriguez, A.L.
;
Tejada, J.A.J.
;
Bargallo Gonzalez, Mireia
;
Eneman, Geert
;
Claeys, Cor
;
Simoen, Eddy
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1868
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Acq. date: 2025-12-15
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Metrics
Views
1868
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-15
Citations