Publication:

A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched G(max)-Core

Date

2021
Journal article
https://doi.org/10.1109/TMTT.2021.3066972
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dc.contributor.authorYun, Byeonghun
dc.contributor.authorPark, Dae-Woong
dc.contributor.authorMahmood, Hafiz Usman
dc.contributor.authorKim, Doyoon
dc.contributor.authorLee, Sang-Gug
dc.contributor.imecauthorPark, Dae-Woong
dc.contributor.orcidextYun, Byeonghun::0000-0001-7847-1329
dc.contributor.orcidextMahmood, Hafiz Usman::0000-0003-2822-5300
dc.contributor.orcidextKim, Doyoon::0000-0002-4080-4076
dc.contributor.orcidimecPark, Dae-Woong::0000-0003-2755-3935
dc.date.accessioned2022-09-27T07:52:42Z
dc.date.available2021-11-02T16:01:13Z
dc.date.available2022-09-27T07:52:42Z
dc.date.issued2021
dc.identifier.doi10.1109/TMTT.2021.3066972
dc.identifier.issn0018-9480
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/37880
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage2519
dc.source.endpage2530
dc.source.issue5
dc.source.journalIEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES
dc.source.numberofpages12
dc.source.volume69
dc.subject.keywordsALGORITHMIC DESIGN
dc.subject.keywordsAMPLIFIER DESIGN
dc.subject.keywordsSPECTROSCOPY
dc.title

A D-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched G(max)-Core

dc.typeJournal article
dspace.entity.typePublication
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