Publication:

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

Date

2023
Journal article
https://doi.org/10.1016/j.sse.2023.108778
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dc.contributor.authorTrojman, Lionel
dc.contributor.authorAcurio, Eliana
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorPosthuma, Niels
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorBakeroot, Benoit
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.date.accessioned2024-01-30T10:34:21Z
dc.date.available2023-11-27T17:27:08Z
dc.date.available2024-01-30T10:34:21Z
dc.date.issued2023
dc.identifier.doi10.1016/j.sse.2023.108778
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43186
dc.publisherPERGAMON-ELSEVIER SCIENCE LTD
dc.source.beginpageArt. 108778
dc.source.endpageN/A
dc.source.issueDecember
dc.source.journalSOLID-STATE ELECTRONICS
dc.source.numberofpages4
dc.source.volume210
dc.subject.keywordsDIODE
dc.title

A compact model based on the Lambert function for AlGaN/GaN Schottky barrier gated-edge termination

dc.typeJournal article
dspace.entity.typePublication
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