Publication:

Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures

Date

2015
Proceedings Paper
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dc.contributor.authorBordallo, Caio
dc.contributor.authorMartino, Joao A.
dc.contributor.authorAgopian, Paula
dc.contributor.authorRooyackers, Rita
dc.contributor.authorVandooren, Anne
dc.contributor.authorThean, Aaron
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-22T18:34:11Z
dc.date.available2021-10-22T18:34:11Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25004
dc.identifier.urlhttp://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7298148
dc.source.beginpage1
dc.source.conference30th Symposium on Microelectronics Technology and Devices - SBMicro
dc.source.conferencedate31/08/2015
dc.source.conferencelocationSalvador de Bahia Brazil
dc.source.endpage4
dc.title

Analysis of analog parameters on in NW-TFETs with Si and SiGe source composition for at high temperatures

dc.typeProceedings paper
dspace.entity.typePublication
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