New current-defined threshold voltage model from 2D potential distribution calculations in MOSFETs

dc.contributor.author	Biesemans, Serge
dc.contributor.author	Kubicek, Stefan
dc.contributor.author	De Meyer, Kristin
dc.contributor.imecauthor	Biesemans, Serge
dc.contributor.imecauthor	Kubicek, Stefan
dc.contributor.imecauthor	De Meyer, Kristin
dc.date.accessioned	2021-09-29T14:17:23Z
dc.date.available	2021-09-29T14:17:23Z
dc.date.embargo	9999-12-31
dc.date.issued	1996
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1092
dc.source.beginpage	43
dc.source.endpage	48
dc.source.journal	Solid-State Electronics
dc.source.volume	39
dc.title	New current-defined threshold voltage model from 2D potential distribution calculations in MOSFETs
dc.type	Journal article
dspace.entity.type	Publication
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