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Mechanisms of oxygen precipitation in Cz-Si wafers subjected to rapid thermal anneals

Date

2011
Journal article
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dc.contributor.authorSarikov, Andrey
dc.contributor.authorLitovchenko, Vladimir
dc.contributor.authorLisovskyy, Igor
dc.contributor.authorVoitovich, Maria
dc.contributor.authorZlobin, Sergei
dc.contributor.authorKladko, Vasyl
dc.contributor.authorSlobodyan, Nikolay
dc.contributor.authorMachulin, Vladimir
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-19T18:26:39Z
dc.date.available2021-10-19T18:26:39Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0013-4651
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19730
dc.source.beginpageH772
dc.source.endpageH777
dc.source.issue8
dc.source.journalJournal of the Electrochemical Society
dc.source.volume158
dc.title

Mechanisms of oxygen precipitation in Cz-Si wafers subjected to rapid thermal anneals

dc.typeJournal article
dspace.entity.typePublication
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