Publication:

Parasitic source/drain resistance reduction in N-channel SOI MuGFETs with 15nm wide fins

Date

2005-10
Proceedings Paper
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dc.contributor.authorDixit, Abhisek
dc.contributor.authorFerain, Isabelle
dc.contributor.authorDe Meyer, Kristin
dc.contributor.authorKottantharayil, Anil
dc.contributor.authorCollaert, Nadine
dc.contributor.authorRooyackers, Rita
dc.contributor.authorLeys, Frederik
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorHoffmann, Thomas
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.contributor.authorGoodwin, Michael
dc.contributor.authorZimmerman, Paul
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-16T01:23:19Z
dc.date.available2021-10-16T01:23:19Z
dc.date.issued2005-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10393
dc.source.beginpage226
dc.source.conferenceProceedings of the IEEE International SOI Conference
dc.source.conferencedate3/10/2005
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage228
dc.title

Parasitic source/drain resistance reduction in N-channel SOI MuGFETs with 15nm wide fins

dc.typeProceedings paper
dspace.entity.typePublication
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