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15nm-WFIN high-performance low-defectivity strained-germanium pFinFETs with low temperature STI-last process
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Date
2014
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Mitard, Jerome
;
Witters, Liesbeth
;
Loo, Roger
;
Lee, Seung Hun
;
Sun, J.W.
;
Franco, Jacopo
;
Ragnarsson, Lars-Ake
;
Brand, A.
;
Lu, X.
;
Yoshido, N.
;
Eneman, Geert
;
Brunco, David
;
Vorderwestner, M.
;
Storck, P.
;
Milenin, Alexey
;
Hikavyy, Andriy
;
Waldron, Niamh
;
Favia, Paola
;
Vanhaeren, Danielle
;
Vanderheyden, Annelies
;
Richard, Olivier
;
Mertens, Hans
;
Arimura, Hiroaki
;
Sioncke, Sonja
;
Vrancken, Christa
;
Bender, Hugo
;
Eyben, Pierre
;
Barla, Kathy
;
Lee, Sun Ghil
;
Horiguchi, Naoto
;
Collaert, Nadine
;
Thean, Aaron
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since deposited on 2021-10-22
Acq. date: 2026-10-08
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since deposited on 2021-10-22
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