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b-FeSi2/Heterojunction properties and their depedence on the b-FeSi2 preparation method

Date

1995
Proceedings Paper
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dc.contributor.authorLibezny, Milan
dc.contributor.authorPoortmans, Jef
dc.contributor.authorVermeulen, Tom
dc.contributor.authorNijs, Johan
dc.contributor.authorAmesz, Peter Henk
dc.contributor.authorHerz, K.
dc.contributor.authorPowalla, M.
dc.contributor.authorReinsperger, G. U.
dc.contributor.authorSchmidt, M.
dc.contributor.authorHoffmann, V.
dc.contributor.authorLange, H.
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-09-29T13:09:29Z
dc.date.available2021-09-29T13:09:29Z
dc.date.embargo9999-12-31
dc.date.issued1995
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/728
dc.source.beginpage1326
dc.source.conference13th European Photovoltaic Solar Energy Conference and Exhibition. Proceedings of the International Conference
dc.source.conferencedate23/10/1995
dc.source.conferencelocationNice France
dc.source.endpage9
dc.title

b-FeSi2/Heterojunction properties and their depedence on the b-FeSi2 preparation method

dc.typeProceedings paper
dspace.entity.typePublication
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