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Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability

Date

2017
Proceedings Paper
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dc.contributor.authorArimura, Hiroaki
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorCott, Daire
dc.contributor.authorDekkers, Harold
dc.contributor.authorLoo, Roger
dc.contributor.authorMitard, Jerome
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorWostyn, Kurt
dc.contributor.authorBoccardi, Guillaume
dc.contributor.authorChiu, Eddie
dc.contributor.authorSubirats, Alexandre
dc.contributor.authorFavia, Paola
dc.contributor.authorVancoille, Eric
dc.contributor.authorDe Heyn, Vincent
dc.contributor.authorMocuta, Dan
dc.contributor.authorCollaert, Nadine
dc.contributor.imecauthorArimura, Hiroaki
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorCott, Daire
dc.contributor.imecauthorDekkers, Harold
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorBoccardi, Guillaume
dc.contributor.imecauthorFavia, Paola
dc.contributor.imecauthorVancoille, Eric
dc.contributor.imecauthorDe Heyn, Vincent
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecDekkers, Harold::0000-0003-4778-5709
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecBoccardi, Guillaume::0000-0003-3226-4572
dc.contributor.orcidimecFavia, Paola::0000-0002-1019-3497
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T02:53:02Z
dc.date.available2021-10-24T02:53:02Z
dc.date.issued2017
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27762
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7998169/
dc.source.beginpage196
dc.source.conferenceSymposium on VLSI Technology
dc.source.conferencedate5/06/2017
dc.source.conferencelocationKyoto Japan
dc.source.endpage197
dc.title

Performance and electrostatic improvement by high-pressure anneal on Si-passivated strained Ge pFinFET and gate all around devices with superior NBTI reliability

dc.typeProceedings paper
dspace.entity.typePublication
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