Publication:
Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications
Date
| dc.contributor.author | Degraeve, Robin | |
| dc.contributor.author | Kaczer, Ben | |
| dc.contributor.author | De Keersgieter, An | |
| dc.contributor.author | Groeseneken, Guido | |
| dc.contributor.imecauthor | Degraeve, Robin | |
| dc.contributor.imecauthor | Kaczer, Ben | |
| dc.contributor.imecauthor | De Keersgieter, An | |
| dc.contributor.imecauthor | Groeseneken, Guido | |
| dc.contributor.orcidimec | Kaczer, Ben::0000-0002-1484-4007 | |
| dc.contributor.orcidimec | De Keersgieter, An::0000-0002-5527-8582 | |
| dc.date.accessioned | 2021-10-14T16:48:59Z | |
| dc.date.available | 2021-10-14T16:48:59Z | |
| dc.date.issued | 2001 | |
| dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/5228 | |
| dc.source.beginpage | 360 | |
| dc.source.conference | 39th Annual International Reliability Physics Symposium; 30 April - 3 May 2001; Orlando, FL, USA. | |
| dc.source.conferencelocation | ||
| dc.source.endpage | 366 | |
| dc.title | Relation between breakdown mode and breakdown location in short channel NMOSFETs and its impact on reliability specifications | |
| dc.type | Proceedings paper | |
| dspace.entity.type | Publication | |
| Files | ||
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