Using the octagonal layout style for MOSFETs to boost the device matching in ionizing radiation environments

dc.contributor.author	Peruzzi, V.V.
dc.contributor.author	Cruz, W.S.
dc.contributor.author	da Silva, G.A.
dc.contributor.author	Simoen, Eddy
dc.contributor.author	Claeys, C.
dc.contributor.author	Gimenez, S.P.
dc.contributor.imecauthor	Simoen, Eddy
dc.contributor.orcidimec	Simoen, Eddy::0000-0002-5218-4046
dc.date.accessioned	2021-10-29T02:07:05Z
dc.date.available	2021-10-29T02:07:05Z
dc.date.issued	2020
dc.identifier.issn	1530-4388
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/35733
dc.identifier.url	https://ieeexplore.ieee.org/document/9239292
dc.source.beginpage	754
dc.source.endpage	759
dc.source.issue	4
dc.source.journal	IEEE Transactions on Device and Materials Reliability
dc.source.volume	20
dc.title	Using the octagonal layout style for MOSFETs to boost the device matching in ionizing radiation environments
dc.type	Journal article
dspace.entity.type	Publication
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