Publication:
Determination of the decay rate of photoionized Te atoms implanted in GaAs and Al0.3Ga0.7As
Date
dc.contributor.author | Bemelmans, Hilde | |
dc.contributor.author | Borghs, Gustaaf | |
dc.contributor.author | Langouche, G. | |
dc.contributor.imecauthor | Borghs, Gustaaf | |
dc.date.accessioned | 2021-09-29T12:39:45Z | |
dc.date.available | 2021-09-29T12:39:45Z | |
dc.date.issued | 1994 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/30 | |
dc.source.beginpage | 1105 | |
dc.source.endpage | 9 | |
dc.source.journal | Materials Science Forum | |
dc.source.volume | 143-147 | |
dc.title | Determination of the decay rate of photoionized Te atoms implanted in GaAs and Al0.3Ga0.7As | |
dc.type | Journal article | |
dspace.entity.type | Publication | |
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