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Determination of the decay rate of photoionized Te atoms implanted in GaAs and Al0.3Ga0.7As

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dc.contributor.authorBemelmans, Hilde
dc.contributor.authorBorghs, Gustaaf
dc.contributor.authorLangouche, G.
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.accessioned2021-09-29T12:39:45Z
dc.date.available2021-09-29T12:39:45Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/30
dc.source.beginpage1105
dc.source.endpage9
dc.source.journalMaterials Science Forum
dc.source.volume143-147
dc.title

Determination of the decay rate of photoionized Te atoms implanted in GaAs and Al0.3Ga0.7As

dc.typeJournal article
dspace.entity.typePublication
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