Publication:

Wet selective SiGe etch to enable Ge nanowire formation.

Date

2016
Proceedings Paper
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dc.contributor.authorSebaai, Farid
dc.contributor.authorWitters, Liesbeth
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorWostyn, Kurt
dc.contributor.authorRip, Jens
dc.contributor.authorYukifumi, Yoshida
dc.contributor.authorLieten, Ruben
dc.contributor.authorBilodeau, Steven
dc.contributor.authorCooper, Emanuel
dc.contributor.imecauthorSebaai, Farid
dc.contributor.imecauthorWitters, Liesbeth
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorRip, Jens
dc.contributor.imecauthorLieten, Ruben
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.date.accessioned2021-10-23T14:44:54Z
dc.date.available2021-10-23T14:44:54Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27288
dc.identifier.urlhttp://www.scientific.net/SSP.255.3
dc.source.beginpage3
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XIII - UCPSS
dc.source.conferencedate11/09/2016
dc.source.conferencelocationKnokke-Heist Belgium
dc.source.endpage7
dc.title

Wet selective SiGe etch to enable Ge nanowire formation.

dc.typeProceedings paper
dspace.entity.typePublication
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