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Stress-induced lift-off method for KERF-loss-free wafering of ultra-thin (~50 μm) crystalline Si wafers

Date

2008
Proceedings Paper
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dc.contributor.authorDross, Frederic
dc.contributor.authorMilhe, A.
dc.contributor.authorRobbelein, Jo
dc.contributor.authorGordon, Ivan
dc.contributor.authorBouchard, P.O.
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorPoortmans, Jef
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.date.accessioned2021-10-17T06:56:53Z
dc.date.available2021-10-17T06:56:53Z
dc.date.embargo9999-12-31
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13675
dc.source.conference33rd IEEE Photovoltaic Specialists Conference
dc.source.conferencedate11/05/2008
dc.source.conferencelocationSan Diego, CA USA
dc.title

Stress-induced lift-off method for KERF-loss-free wafering of ultra-thin (~50 μm) crystalline Si wafers

dc.typeProceedings paper
dspace.entity.typePublication
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