Publication:

3D IGZO Charge-Coupled Memory DTCO & STCO Analysis for Compute-near-Memory Applications

 
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0003-3495-9263
cris.virtual.orcid0000-0001-5244-5755
cris.virtual.orcid0000-0003-1188-4924
cris.virtual.orcid0000-0002-1960-5136
cris.virtual.orcid0000-0002-3663-7439
cris.virtual.orcid0000-0001-7090-8821
cris.virtual.orcid0000-0002-1677-6474
cris.virtual.orcid0000-0002-1087-3433
cris.virtual.orcid0000-0002-6792-7965
cris.virtual.orcid0000-0003-3378-887X
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-9585-6722
cris.virtual.orcid0000-0003-3312-2381
cris.virtual.orcid0000-0001-5772-5406
cris.virtual.orcid0000-0003-4946-8432
cris.virtualsource.departmentc84426b5-5f84-48ba-9153-1fe96862af32
cris.virtualsource.department329540aa-d0e1-42d0-8c19-47bb424bde51
cris.virtualsource.department89856542-80db-428c-8ba5-3be494ea8b67
cris.virtualsource.department8311c522-c607-40bc-8b22-a02dd2896062
cris.virtualsource.department907474d7-b288-4cda-ae3b-769a18d335fa
cris.virtualsource.department27d1e508-9046-482f-a895-c93175a8f135
cris.virtualsource.department474cccc0-f744-469d-95ff-4d68931df311
cris.virtualsource.department92510db1-91b0-4865-a06f-c3b655429966
cris.virtualsource.department7386c741-e8e9-427f-bca4-f091a80818f8
cris.virtualsource.department93bad253-774e-4816-813b-40901fefdc0f
cris.virtualsource.department32a168a7-f703-4acb-992e-5161c455c77d
cris.virtualsource.departmented894ec9-d595-4dd3-943b-8d99244a104d
cris.virtualsource.departmentd9f73785-ed19-4db8-8a8d-1769214b9dc4
cris.virtualsource.department3b9b4f69-3236-4378-8826-c313da2419df
cris.virtualsource.department3390eb9c-7227-4d66-9355-35d95810883a
cris.virtualsource.departmentcde753e2-b8a2-40c3-8373-8ad3702c1353
cris.virtualsource.orcidc84426b5-5f84-48ba-9153-1fe96862af32
cris.virtualsource.orcid329540aa-d0e1-42d0-8c19-47bb424bde51
cris.virtualsource.orcid89856542-80db-428c-8ba5-3be494ea8b67
cris.virtualsource.orcid8311c522-c607-40bc-8b22-a02dd2896062
cris.virtualsource.orcid907474d7-b288-4cda-ae3b-769a18d335fa
cris.virtualsource.orcid27d1e508-9046-482f-a895-c93175a8f135
cris.virtualsource.orcid474cccc0-f744-469d-95ff-4d68931df311
cris.virtualsource.orcid92510db1-91b0-4865-a06f-c3b655429966
cris.virtualsource.orcid7386c741-e8e9-427f-bca4-f091a80818f8
cris.virtualsource.orcid93bad253-774e-4816-813b-40901fefdc0f
cris.virtualsource.orcid32a168a7-f703-4acb-992e-5161c455c77d
cris.virtualsource.orcided894ec9-d595-4dd3-943b-8d99244a104d
cris.virtualsource.orcidd9f73785-ed19-4db8-8a8d-1769214b9dc4
cris.virtualsource.orcid3b9b4f69-3236-4378-8826-c313da2419df
cris.virtualsource.orcid3390eb9c-7227-4d66-9355-35d95810883a
cris.virtualsource.orcidcde753e2-b8a2-40c3-8373-8ad3702c1353
dc.contributor.authorWang, Bowen
dc.contributor.authorAkhunov, Khakim
dc.contributor.authorOh, Hyungrock
dc.contributor.authorGarcia Redondo, Fernando
dc.contributor.authorChen, Yukai
dc.contributor.authorSharma, Arvind
dc.contributor.authorSun, Jiacong
dc.contributor.authorGamage, Sahan
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorMahato, Swaraj
dc.contributor.authorKishore, Rishabh
dc.contributor.authorSubhechha, Subhali
dc.contributor.authorKulkarni, Jaydeep
dc.contributor.authorVerhelst, Marian
dc.contributor.authorBiswas, Dwaipayan
dc.contributor.authorGarcia Bardon, Marie
dc.contributor.authorDehaene, Wim
dc.contributor.authorRyckaert, Julien
dc.date.accessioned2026-05-28T07:43:39Z
dc.date.available2026-05-28T07:43:39Z
dc.date.createdwos2026-02-10
dc.date.issued2025
dc.description.abstractThe demand for high-capacity and energy-efficient memory solutions has surged in the era of data-centric computing, particularly for Artificial Intelligence (AI) and Machine Learning (ML) workloads. This paper introduces a novel memory architecture leveraging Charge-Coupled Device (CCD) technology, engineered in a sequential-access block memory configuration, to enhance Compute-near-Memory (CnM) systems. We propose an optimized 3D IGZO CCD block memory as an on-chip weight buffer for high-capacity CnM systems. Our approach achieves 2.95−131.26× improvement in area efficiency and 1.32−4.33× improvement in energy efficiency compared to SRAM solutions.
dc.identifier.doi10.1109/iscas56072.2025.11043541
dc.identifier.isbn979-8-3503-5684-7
dc.identifier.issn0271-4302
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/59452
dc.language.isoeng
dc.provenance.editstepusergreet.vanhoof@imec.be
dc.publisherIEEE
dc.source.conferenceIEEE International Symposium on Circuits and Systems (ISCAS)
dc.source.conferencedate2025-05-25
dc.source.conferencelocationLondon
dc.source.journal2025 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS, ISCAS
dc.source.numberofpages5
dc.subject.keywordsACCESS
dc.title

3D IGZO Charge-Coupled Memory DTCO & STCO Analysis for Compute-near-Memory Applications

dc.typeProceedings paper
dspace.entity.typePublication
imec.internal.crawledAt2026-04-07
imec.internal.sourcecrawler
imec.internal.wosCreatedAt2026-04-07
Files
Publication available in collections: