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Statistical spectroscopy of switching traps in deeply scaled vertical poly-Si channel for 3D memories

Date

2013
Proceedings Paper
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dc.contributor.authorToledano Luque, Maria
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorLuong, Vu
dc.contributor.authorTang, Baojun
dc.contributor.authorLisoni, Judit
dc.contributor.authorTan, Chi Lim
dc.contributor.authorArreghini, Antonio
dc.contributor.authorVan den Bosch, Geert
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorVan Houdt, Jan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorLuong, Vu
dc.contributor.imecauthorArreghini, Antonio
dc.contributor.imecauthorVan den Bosch, Geert
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecArreghini, Antonio::0000-0002-7493-9681
dc.contributor.orcidimecVan den Bosch, Geert::0000-0001-9971-6954
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2021-10-21T12:46:31Z
dc.date.available2021-10-21T12:46:31Z
dc.date.issued2013
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23173
dc.source.beginpage562
dc.source.conferenceInternational Electron Devices Meeting - IEDM
dc.source.conferencedate9/12/2013
dc.source.conferencelocationWashington, DC USA
dc.source.endpage565
dc.title

Statistical spectroscopy of switching traps in deeply scaled vertical poly-Si channel for 3D memories

dc.typeProceedings paper
dspace.entity.typePublication
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