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Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Publication:
Enabling 3X nm DRAM: Record low leakage 0.4 nm EOT MIM capacitors with novel stack engineering
Date
2010
Proceedings Paper
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21838.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Pawlak, Malgorzata
;
Popovici, Mihaela Ioana
;
Swerts, Johan
;
Tomida, Kazuyuki
;
Kim, Min-Soo
;
Kaczer, Ben
;
Opsomer, Karl
;
Schaekers, Marc
;
Favia, Paola
;
Bender, Hugo
;
Vrancken, Christa
;
Govoreanu, Bogdan
;
Demeurisse, Caroline
;
Wang, Wan-Chih
;
Afanasiev, Valeri
;
Debusschere, Ingrid
;
Altimime, Laith
;
Kittl, Jorge
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2100
since deposited on 2021-10-18
Acq. date: 2025-10-24
Citations
Metrics
Views
2100
since deposited on 2021-10-18
Acq. date: 2025-10-24
Citations