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Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog anpplications
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Effects of HfSiO nitridation and TiN metal gate thickness on p- and n-SOI MuGFETs for analog anpplications
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Date
2010
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Galeti, M.
;
Rodrigues, M.
;
Martino, J.A.
;
Collaert, Nadine
;
Simoen, Eddy
;
Claeys, Cor
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Views
1852
since deposited on 2021-10-18
2
last month
Acq. date: 2025-12-12
Citations