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On the high-field transport and uniaxial stress effect in Ge PFETs

Date

2011
Journal article
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dc.contributor.authorKobayashi, Masaharu
dc.contributor.authorMitard, Jerome
dc.contributor.authorIrisawa, Toshifumi
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorMeuris, Marc
dc.contributor.authorSaraswat, Krishna
dc.contributor.authorNishi, Yoshio
dc.contributor.authorHeyns, Marc
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.accessioned2021-10-19T14:54:08Z
dc.date.available2021-10-19T14:54:08Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19188
dc.source.beginpage384
dc.source.endpage391
dc.source.issue2
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume58
dc.title

On the high-field transport and uniaxial stress effect in Ge PFETs

dc.typeJournal article
dspace.entity.typePublication
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