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Study of point defects in silicon by means of positron annihilation with core electrons

Date

1997
Proceedings Paper
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dc.contributor.authorKuriplach, J.
dc.contributor.authorVan Hoecke, T.
dc.contributor.authorVan Waeyenberge, B.
dc.contributor.authorDauwe, C.
dc.contributor.authorSegers, D.
dc.contributor.authorBalcaen, N.
dc.contributor.authorMorales, A. L.
dc.contributor.authorTrauwaert, Marie-Astrid
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSob, M.
dc.date.accessioned2021-09-30T08:35:15Z
dc.date.available2021-09-30T08:35:15Z
dc.date.embargo9999-12-31
dc.date.issued1997
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1976
dc.source.beginpage605
dc.source.conferenceProceedings 11th International Conference on Positron Annihilation - ICPA-11
dc.source.conferencedate20/05/1997
dc.source.conferencelocationKansas City, KA USA
dc.source.endpage607
dc.title

Study of point defects in silicon by means of positron annihilation with core electrons

dc.typeProceedings paper
dspace.entity.typePublication
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